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ISHIKAWA Yasuaki
Department Aoyama Gakuin University Department of Electrical Engineering and Electronics, College of Science and Engineering Position Professor |
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| Language | English |
| Publication Date | 2018/10 |
| Type | Academic Journal |
| Peer Review | Peer reviewed |
| Title | Influence of ALD Precursors and High-Pressure Water Vapor Annealing on Al2O3/GaN MOS Capacitor Characteristics |
| Contribution Type | Collaboration |
| Journal | AIP Adv. |
| Journal Type | Another Country |
| Volume, Issue, Page | 8,pp.105103-1-6 |
| Author and coauthor | Mutsunori Uenuma, Kiyoshi Takahashi, Sho Sonehara, Yuta Tominaga, Yuta Fujimoto, Yasuaki Ishikawa, and Yukiharu Uraoka |
| DOI | 10.1063/1.5041501 |