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ISHIKAWA Yasuaki
Department Aoyama Gakuin University Department of Electrical Engineering and Electronics, College of Science and Engineering Position Professor |
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| Language | English |
| Publication Date | 2013/09 |
| Type | Academic Journal |
| Peer Review | Peer reviewed |
| Title | Characterization of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition |
| Contribution Type | Collaboration |
| Journal | Physica Status Solidi C |
| Journal Type | Another Country |
| Volume, Issue, Page | 10,pp.1426-1429 |
| Author and coauthor | Koji Yoshitsugu, Masahiro Horita, Yasuaki Ishikawa, and Yukiharu Uraoka |
| DOI | 10.1002/pssc.201300273 |