ISHIKAWA Yasuaki
Department Aoyama Gakuin University Department of Electrical Engineering and Electronics, College of Science and Engineering Position Professor |
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Language | English |
Publication Date | 2017/04 |
Type | Academic Journal |
Peer Review | Peer reviewed |
Title | Solution-derived SiO2 Gate Insulator Formed by CO2 Laser Annealing for Polycrystalline Silicon Thin-film Transistors |
Contribution Type | Collaboration |
Journal | Jpn. J. Appl. Phys. |
Journal Type | Another Country |
Volume, Issue, Page | 56,pp.056503-1-5 |
Author and coauthor | Daisuke Hishitani, Masahiro Horita, Yasuaki Ishikawa, Hiroshi Ikenoue, and Yasuaki Uraoka |
DOI | 10.7567/JJAP.56.056503 |