ISHIKAWA Yasuaki
Department Aoyama Gakuin University Department of Electrical Engineering and Electronics, College of Science and Engineering Position Professor |
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Language | English |
Publication Date | 2018/02 |
Type | Academic Journal |
Peer Review | Peer reviewed |
Title | Improvement of Amorphous InGaZnO Thin-Film Transistor Using High-k SrTa2O6 as Gate Insulator Deposited by Sputtering Method |
Contribution Type | Collaboration |
Journal | Physica status solidi A |
Journal Type | Another Country |
Volume, Issue, Page | 216,pp.1700773-1-5 |
Author and coauthor | Takanori Takahashi, Takeshi Hoga, Ryoko Miyanaga, Kento Oikawa, Mami N. Fujii, Yasuaki Ishikawa, Yukiharu Uraoka, and Kiyoshi Uchiyama |
DOI | 10.1002/pssa.201700773 |